Metallic Spintronic Devices

• Describes spintronic applications in current and future magnetic recording devices
• Discusses spin-transfer torque magnetoresistive random-access memory (STT-MRAM) device architectures and modeling
• Explores prospects of STT-MRAM scaling, such as detailed multilevel cell structure analysis
• Investigates spintronic device write and read optimization in light of spintronic memristive effects
• Considers spintronic research directions based on yttrium iron garnet thin films, including spin pumping, magnetic proximity, spin hall, and spin Seebeck effects
• Proposes unique solutions for low-power spintronic device applications where memory is closely integrated with logic

Metallic Spintronic Devices aims to equip anyone who is serious about metallic spintronic devices with up-to-date design, modeling, and processing knowledge. It can be used either by an expert in the field or a graduate student in course curriculum.